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| Advance Product Information March 15, 2005 27 - 31 GHz 2W Balanced Power Amplifier Key Features * * * * * * * * TGA4513-CP 27 - 31 GHz Bandwidth > 32 dBm Nominal P1dB 33 dBm Nominal Psat 22 dB Nominal Gain IMD3 is 32 dBc @ 18 dBm SCL 12 dB Nominal Return Loss Bias: 6 V, 840 mA Package Dimensions: 13.34 x 9.65 x 1.85 mm (0.525 x 0.380 x 0.073 in) Primary Applications * * * * Satellite Ground Terminal Point to Point Radio Point to Multi Point Radio LMDS S-Parameter (dB) 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 27 27.5 28 28.5 29 29.5 30 30.5 31 S21 S11 S22 Measured Data Bias Conditions: Vd = 6 V, Id = 840 mA Product Description The TriQuint TGA4513-CP is a compact 2 Watt High Power Amplifier Packaged MMIC for Ka-band applications. It provides 22 dB nominal gain and 12 dB nominal return loss. The TGA4513 provides a nominal 33 dBm of output power. It is a lead free device. The part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals, point to point radio and LMDS. The TGA4513-CP is 100% RF tested to ensure performance compliance. Lead-Free & RoHS compliant. Evaluation boards are available. Frequency (GHz) 34 33.5 OutPut Power (dBm) 33 32.5 32 31.5 31 30.5 30 29.5 29 27 28 29 Frequency (GHz) 30 31 P1dB Psat Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 1 Advance Product Information March 15, 2005 TGA4513-CP TABLE I MAXIMUM RATINGS 1/ SYMBOL V + PARAMETER Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 7V -3 TO 0 V 1.05 A 10 mA 22 dBm 6.71 W 150 C 260 0C -65 to 150 0C 0 NOTES 2/ VI + 2/ 3/ IG PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/ 2/ 4/ 5/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Total current for the device. When operated at this bias condition with a base plate temperature of 70 0C, the median life is 1.0E+6 hrs. Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 2 Advance Product Information March 15, 2005 TGA4513-CP TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C, Nominal) PARAMETER Drain Operating Quiescent Current Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Output Power @ 1 dB Compression Gain, P1dB Power @ saturated, Psat IMD3 @ 18 dBm SCL, at 30 GHz TYPICAL 6 840 22 14 12 > 32 33 32 UNITS V mA dB dB dB dBm dBm dBc TABLE III THERMAL INFORMATION Parameter JC Thermal Resistance (Channel to Backside of Package) Test Conditions VD = 6 V ID = 0.84 A (Quiescent) PDISS = 5.04 W Tbase = 70 C TCH (qC) TJC (qC/W) 11.92 TM (hrs) 130.1 5.9 E+6 TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 3 Advance Product Information March 15, 2005 TGA4513-CP Measured Data Bias Conditions: Vd = 6 V, Id = 840 mA 30 25 20 S21 (dB) 15 10 25 degC 5 0 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) 70 degC -40 degC 0 -5 -10 S11 (dB) -15 -20 -25 25 degC -30 -35 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) 70 degC -40 degC 0 -5 -10 S22 (dB) -15 -20 -25 -30 -35 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) 25 degC 70 degC -40 degC TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 4 Advance Product Information March 15, 2005 TGA4513-CP Measured Data Bias Conditions: Vd = 6 V, Id = 840 mA 36 34 32 30 35 30 Power Gain (dB) Ids (A) 5 Pout(dBm) 28 26 24 22 20 18 16 -1 1 3 5 7 9 11 13 15 27 GHz 28 GHz 29 GHz 30 GHz 31 GHz Si6 25 20 15 10 17 19 21 Pin (dBm) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -1 1 27 GHz 28 GHz 29 GHz 30 GHz 31 GHz Si6 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 5 7 9 11 13 15 17 19 21 Pin (dBm) PAE(%) 3 TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com Advance Product Information March 15, 2005 TGA4513-CP Measured Data Bias Conditions: Vd = 6 V, Id = 840 mA, f = 10 MHz 60 55 50 IMD3 (dBc) 45 40 35 30 25 20 15 6 8 10 12 14 16 18 20 22 24 26 Output Power Per Tone (dBm) 29 GHz 30 GHz 31 GHz TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 6 Advance Product Information March 15, 2005 TGA4513-CP Package Pinout Diagram TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 7 Advance Product Information March 15, 2005 TGA4513-CP Mechanical Drawing DIMENSIONS IN INCHES [MINIMETER] Top View 0.073 +/- 0.005 LID 1.8542 .005 SUBSTRATE STACK . 0. 8153 0.0028/ 0.0 0 24 0.000 0.032 +0.003/-0.002 0.0000 DIMENSIONS IN INCHES Side View TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 8 Advance Product Information March 15, 2005 TGA4513-CP Bias Schematic Tow 1 mil bond wires are recommended for the RF input, output and Vg. Four bond wires are recommended for Vd. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 9 Advance Product Information March 15, 2005 TGA4513-CP Assembly of a TGA4513-CP into a Module Manual Assembly for Prototypes 1. Clean the module with Acetone. Rinse with alcohol and DI water. Allow the module to fully dry. 2. To improve the thermal and RF performance, we recommend attaching a heatsink to the bottom of the package. If the TGA4513-CP is mounted to the heatsink with mounting screws, we recommend an indium shim or other compliant material be inserted between the TGA4513-CP and the heatsink to reduce thermal contact resistance due to air gaps. The TGA4513-CP may also be attached to the heatsink using SN63 solder or any other Tin/Lead solder. The TGA4513-CP may also be mounted with DieMat DM6030HK conductive epoxy. 3. The DC and RF interconnects may be gold bondwires or gold ribbons. The RF interconnects should be as short as possible. A minimum of two 1 mil wires are recommended for the RF Input, RF Output, Vg, and four 1 mil bond wires for Vd. ORDERING INFORMATION PART TGA4513-CP PACKAGE STYLE CARRIER PLATE, LEAD FREE TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com 10 |
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